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学者论坛:Emergent Phenomena in Ferroic Complex Oxide Thin Films

       人力资源部教师发展中心学者论坛第108期邀请到加州大学伯克利分校副教授、美国劳伦斯国家实验室科学家Lane Martin博士分享复杂氧化物异质结的最新研究进展。具体安排如下,欢迎感兴趣的师生参加。

       一、主 题:Emergent Phenomena in Ferroic Complex Oxide Thin Films
       二、主讲人:加州大学伯克利分校副教授、美国劳伦斯国家实验室科学家Lane Martin博士
       三、时 间 及 地点:5月8日(周二)上午10:00,沙河校区万博最新客户端204会议室
                                        5月10日(周四)上午10:00,清水河校区5号楼344会议室
       四、主持人:万博最新客户端 乔梁 教授,电子学院 白飞明 教授
       五、内容简介
       Complex oxide materials possess a range of interesting properties and phenomena that make them candidates for next-generation devices and applications. But before these materials can be integrated into state-of-the-art devices, it is important to understand how to control and engineer the response of these materials in a deterministic manner. In this talk we will discuss the science and engineering of emergent ferroic order and phenomena. We will explore the role of the epitaxial thin-film growth process and the use of new types of lattice mismatch strain to engineer a range of systems with special attention to ferroelectric materials. In recent years, the use of epitaxial strain has enabled the production of model versions of these complicated materials and the subsequent deterministic study of field-dependent response. Here, we will investigate how new manifestations of epitaxial constraint can enhance electric field, stress, and temperature susceptibilities (i.e., dielectric, piezoelectric, pyroelectric, and electrocaloric effects) in ferroelectrics. In particular, we will explore a number of routes to push the boundaries of modern thin-film strain to control materials including the use of film orientation to produce exotic domain structures and emulate neuron function, superlattice routes to produce novel states of matter, and novel energy conversion approaches based on ferroic materials. The discussion will range from the development of a fundamental understanding of the physics that lies at the heart of the observed effects, to an illustration of routes to manipulate and control these effects, to the demonstration of solid-state devices based on these materials.
       六、主讲人简介
       Professor Lane W. Martin is an Associate Professor of Materials Science and Engineering and a Faculty Scientist in the Materials Science Division at Lawrence Berkeley National Laboratory. Lane received his B. S. in Materials Science and Engineering from Carnegie Mellon University in Dec. 2003 and his M. S. and Ph.D. in Materials Science and Engineering from the University of California, Berkeley in 2006 and 2008, respectively. From 2008 to 2009, Lane served as a Postdoctoral Fellow in the Quantum Materials Program, Materials Science Division, Lawrence Berkeley National Laboratory. From 2009 to 2014, Lane was an Assistant Professor in the Department of Materials Science and Engineering at the University of Illinois, Urbana-Champaign. In 2014, Lane returned to the University of California, Berkeley as an Associate Professor. Lane has published >175 papers and his work has been cited ~12,000 times (resulting in an h-index of 49) and he has given ~115 invited/plenary/keynote talks during his career. Lane’s work has garnered a number of awards including the Robert L. Coble Award for Young Scholars from the American Ceramic Society (2016), the American Association for Crystal Growth (AACG) Young Author Award (2015), the Presidential Early Career Award for Scientists and Engineers (2014), the Dean’s Award for Research Excellence for the University of Illinois, Urbana-Champaign (2013), the National Science Foundation CAREER Award (2012), the Army Research Office Young Investigator Program Award (2010), a National Science Foundation IGERT Fellowship in Nanoscale Science and Engineering (2004-2007), the Intel Robert Noyce Fellowship in Microelectronics (2007-2008), the Graduate Excellence in Materials Science Award (2006), and the Materials Research Society’s Gold Medal Award for Graduate Students (2006).
       八、主办单位:人力资源部教师发展中心
       承办单位:物理学院

       人力资源部教师发展中心
       2018年5月3日